Bi2O2Se-Based Memristor-Aided Logic

Bo Liu; Yudi Zhao; Dharmendra Verma; Le An Wang; Hanyuan Liang; Hui Zhu; Lain-Jong Li; Tuo-Hung Hou; Chao-Sung Lai

doi:10.1021/acsami.1c00177

Bi₂O₂Se-Based Memristor-Aided Logic

ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15391-15398. doi: 10.1021/acsami.1c00177. Epub 2021 Mar 16.

Authors

Bo Liu¹, Yudi Zhao², Dharmendra Verma³, Le An Wang¹, Hanyuan Liang⁴, Hui Zhu¹, Lain-Jong Li^{3

5}, Tuo-Hung Hou⁶, Chao-Sung Lai^{3

7

8

9}

Affiliations

¹ Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China.
² School of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China.
³ Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan.
⁴ School of Electrical Engineering and Computer Science, The Pennsylvania State University, 207 Electrical Engineering West, University Park Pennsylvania 16801, United States.
⁵ Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong Island 999077, Hong Kong.
⁶ Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan.
⁷ Artificial Intelligence and Green Technology Research Center, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan.
⁸ Department of Nephrology, Chang Gung Memorial Hospital, Guishan Dist., Linkou 33305, Taiwan.
⁹ Department of Materials Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan.

PMID: 33723989
DOI: 10.1021/acsami.1c00177

Abstract

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi₂O₂Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi₂O₂Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi₂O₂Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi₂O₂Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Keywords: Bi2O2Se; CAFM; MAGIC; RRAM; kinetic Monte Carlo.