Structural Phase Transition of Multilayer VSe2

Dian Li; Xiong Wang; Chi-Ming Kan; Daliang He; Zejun Li; Qing Hao; Hongbo Zhao; Changzheng Wu; Chuanhong Jin; Xiaodong Cui

doi:10.1021/acsami.0c04449

Structural Phase Transition of Multilayer VSe₂

ACS Appl Mater Interfaces. 2020 Jun 3;12(22):25143-25149. doi: 10.1021/acsami.0c04449. Epub 2020 May 7.

Authors

Dian Li¹, Xiong Wang¹, Chi-Ming Kan¹, Daliang He², Zejun Li³, Qing Hao⁴, Hongbo Zhao⁵, Changzheng Wu³, Chuanhong Jin², Xiaodong Cui¹

Affiliations

¹ Physics Department, University of Hong Kong, Hong Kong SAR, P. R. China.
² State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310024, P. R. China.
³ Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China.
⁴ Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85721, United States.
⁵ Department of Electrical and Computer Engineering, University of Arizona, Tucson, Arizona 85721, United States.

PMID: 32348109
DOI: 10.1021/acsami.0c04449

Abstract

Vanadium diselenide (VSe₂), a member of the transition metal dichalcogenides (TMDs) family, is emerging as a promising two-dimensional (2D) candidate for the electronic and spintronic device with exotic properties including charge/spin density wave and ferromagnetism. The bulk crystal VSe₂ exists in a crystallographic form of 1T-phase with metallic behavior. In this paper, we report a structural phase transition of multilayer VSe₂ from 1T to 2H through annealing at 650 K, accompanying a metal-insulator transition. We observe that the 2H-phase is more thermodynamically favorable than the 1T-phase at 2D.

Keywords: 2D material; 2H-phase; metal−insulator transition; structural phase transition; vanadium diselenide.