Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN

Yitian Bao; Shijie Xu

doi:10.1021/acsomega.9b01394

Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN

ACS Omega. 2019 Sep 10;4(13):15401-15406. doi: 10.1021/acsomega.9b01394. eCollection 2019 Sep 24.

Authors

Yitian Bao¹, Shijie Xu¹

Affiliation

¹ Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China.

Abstract

Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes' rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 10⁴ V/cm in GaN with a fairly low dopant density. On the basis of the Franz-Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values.