Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

Adv Mater. 2017 Mar;29(12). doi: 10.1002/adma.201604457. Epub 2017 Jan 30.

Abstract

A novel Ag/oxide-based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

Keywords: memory; memristor nonlinearity; neuromorphic computing; selector.