Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu-Chuan Lin; Ram Krishna Ghosh; Rafik Addou; Ning Lu; Sarah M Eichfeld; Hui Zhu; Ming-Yang Li; Xin Peng; Moon J Kim; Lain-Jong Li; Robert M Wallace; Suman Datta; Joshua A Robinson

doi:10.1038/ncomms8311

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Nat Commun. 2015 Jun 19:6:7311. doi: 10.1038/ncomms8311.

Authors

Affiliations

¹ Department of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
² Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
³ Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
⁴ Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
⁵ Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.