Electronic Raman scattering on individual semiconducting single walled carbon nanotubes

Xi Chen; Bairen Zhu; Anmin Zhang; Hualing Zeng; Qingming Zhang; Xiaodong Cui

doi:10.1038/srep05969

Electronic Raman scattering on individual semiconducting single walled carbon nanotubes

Sci Rep. 2014 Aug 6:4:5969. doi: 10.1038/srep05969.

Authors

Xi Chen¹, Bairen Zhu¹, Anmin Zhang², Hualing Zeng³, Qingming Zhang², Xiaodong Cui¹

Affiliations

¹ Department of Physics, The University of Hong Kong, Hong Kong, China.
² Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials &Micro-nano Devices, Renmin University of China, Beijing 100872, People's Republic of China.
³ 1] Department of Physics, The Chinese University of Hong Kong, Hong Kong, China [2] Department of Physics, The University of Hong Kong, Hong Kong, China.

Abstract

We report experimental measurements of electronic Raman scattering by electrons (holes) in individual single-walled carbon nanotubes (SWNTs) under resonant conditions. The Raman scattering at low frequency range reveals a single particle excitation feature. And the dispersion of electronic structure around the center of Brillouin zone of a semiconducting SWNT (14, 13) is extracted.

Publication types

Research Support, Non-U.S. Gov't